The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
May. 24, 2002
Klaus Diefenbeck, Munich, DE;
Christian Herzum, Poecking, DE;
Jakob Huber, Beyharting, DE;
Karlheinz Müller, Velden, DE;
Klaus Diefenbeck, Munich, DE;
Christian Herzum, Poecking, DE;
Jakob Huber, Beyharting, DE;
Karlheinz Müller, Velden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor structure includes a base layer of a first conductivity type, a first layer of the first conductivity type arranged on the base layer and having a dopant concentration that is lower than a dopant concentration of the base layer, and a second layer of a second conductivity type being operative with the first layer in order to form a transition between the first conductivity type and the second conductivity type. A course of a dopant profile at the transition between the base layer and the first layer is set such that in an ESD case a space charge region shifted to the transition between the base layer and the first layer reaches into the base layer.