The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Aug. 29, 2002
Thomas R. Keyser, Plymouth, MN (US);
Thomas R. Keyser, Plymouth, MN (US);
Honeywell International, Inc., Morristown, NJ (US);
Abstract
A semiconductor device has a silicon layer and a first dielectric layer. A transistor has a drain and a source that are at least partially in the silicon layer. The transistor further has a gate and a spacer defining the gate. The first dielectric layer forms the spacer. A capacitor has first and second electrodes, the first electrode is formed at least partially in the silicon layer, and the first dielectric layer provides a dielectric for the capacitor between the first and second electrodes. A resistor has a resistive region formed at least partially in the silicon layer and has first and second resistor contact areas defined by the first dielectric layer. A second dielectric layer electrically isolates the transistor, the capacitor, and the resistor from conductive lines.