Nonvolatile semiconductor memory device, manufacturing method thereof, and operating method thereof

Abstract

Nonvolatile memory elements are disclosed which can have increased capacity, reduced operating voltage and/or faster operating speeds. According to one embodiment, a nonvolatile memory element can include a first diffusion layer () and a second diffusion layer () formed in a main surface of a substrate (). A laminate film can be formed near a first diffusion layer () and/or a second diffusion layers () that includes a first insulating film (or), a second insulating film (or), and a third insulating film (or). A gate insulating film () can be formed a channel region and gate electrode () can be formed to cover gate insulating film () and the laminate film(s) that has a T-shape. A gate electrode () can have end portions that sandwich a first insulating film (or), a second insulating film (or), and a third insulating film (or) with a first diffusion layer () and/or second diffusion layer ().