The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2005

Filed:

Feb. 11, 2002
Applicants:

Xizeng Shi, Fremont, CA (US);

Matthew Gibbons, Livermore, CA (US);

Hua-ching Tong, San Jose, CA (US);

Kyusik Sin, Pleasanton, CA (US);

Inventors:

Xizeng Shi, Fremont, CA (US);

Matthew Gibbons, Livermore, CA (US);

Hua-Ching Tong, San Jose, CA (US);

Kyusik Sin, Pleasanton, CA (US);

Assignee:

Western Digital (Fremont), Inc., Lake Forest, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract

A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.


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