The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Apr. 18, 2003
Kenji Kotani, Yokohama, JP;
Hiroshi Yano, Yokohama, JP;
Kenji Kotani, Yokohama, JP;
Hiroshi Yano, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
This invention provides a hetero-junction bipolar transistor (HBT) in which both a base resistance and a base-collector parasitic capacitance are decreased. The HBT has a collector (C)a base (B)and an emitter (E). The collector comprises an outer collector region and an inner collector region, a thickness of the outer collector region is greater than that of the inner region. The base comprises an intrinsic region and an extrinsic region on the outer collector region, while the intrinsic base disposed on the inner collector region. The emitter is disposed on both the intrinsic base and the extrinsic base, and has a band gap energy greater than that of the base.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile