The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Jun. 27, 2002
David B. Slater, Jr., Raleigh, NC (US);
Jayesh Bharathan, Santa Barbara, CA (US);
John Edmond, Cary, NC (US);
Mark Raffetto, Santa Barbara, CA (US);
Anwar Mohammed, San Jose, CA (US);
Peter S. Andrews, Greensboro, NC (US);
Gerald H. Negley, Hillsborough, NC (US);
David B. Slater, Jr., Raleigh, NC (US);
Jayesh Bharathan, Santa Barbara, CA (US);
John Edmond, Cary, NC (US);
Mark Raffetto, Santa Barbara, CA (US);
Anwar Mohammed, San Jose, CA (US);
Peter S. Andrews, Greensboro, NC (US);
Gerald H. Negley, Hillsborough, NC (US);
Cree, Inc., Durham, NC (US);
Cree Microwave, Inc., Sunnyvale, CA (US);
Abstract
Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.