The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Oct. 30, 2001
Toshiro Hayakawa, Kaisei-machi, JP;
Toshiro Hayakawa, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa-ken, JP;
Abstract
An n-GaN low-temperature buffer layer, an n-GaN buffer layer, an n-InGaN buffer layer, an n-AlGaN clad layer, an n-GaN optical guide layer, an undoped active layer, a p-GaN optical guide layer, a p-AlGaN clad layer, and a p-GaN cap layer, are grown on a sapphire substrate. Then, an epitaxial layer other than a light-emitting region is etched until the n-GaN buffer layer is exposed. Next, in a similar process, etching is performed up to anywhere within the p-AlGaN clad layer so that a 4-μm-wide stripe region in the form of a ridge remains. The length from the light-emitting facet to the opposite facet is between 30 and 250 μm.