The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Oct. 05, 2001
Applicants:
François Guyader, La Tronche, FR;
Franck Arnaud, Le Sappey en Chartreuse, FR;
Inventors:
François Guyader, La Tronche, FR;
Franck Arnaud, Le Sappey en Chartreuse, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ; H01L021/3205 ; H01L021/4763 ; H01L021/44 ;
U.S. Cl.
CPC ...
Abstract
The invention concerns a method for forming, in a substrate () having a first type of conductivity, a MOS transistor, comprising the following steps: a) forming on the substrate an insulated gate (); b) implanting a doping agent having a second type of conductivity; c) forming on the edges of the gate silicon nitride spacers; d) simultaneously oxidising the apparent surfaces of the substrate, the gate and the spacers; and e) drain and source implantation.