The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Aug. 19, 2002
Masayoshi Hiramoto, Ikoma, JP;
Nozomu Matsukawa, Yamatokoriyama, JP;
Hiroshi Sakakima, Kyotanabe, JP;
Hideaki Adachi, Hirakata, JP;
Akihiro Odagawa, Nara, JP;
Masayoshi Hiramoto, Ikoma, JP;
Nozomu Matsukawa, Yamatokoriyama, JP;
Hiroshi Sakakima, Kyotanabe, JP;
Hideaki Adachi, Hirakata, JP;
Akihiro Odagawa, Nara, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A magnetoresistive device including a high-resistivity layer (), a first magnetic layer () and a second magnetic layer (), the first magnetic layer () and the second magnetic layer () being arranged so as to sandwich the high-resistivity layer (), wherein the high-resistivity layer () is a barrier for passing tunneling electrons between the first magnetic layer () and the second magnetic layer (), and contains at least one element Lselected from oxygen, nitrogen and carbon; at least one layer A selected from the first magnetic layer () and the second magnetic layer () contains at least one metal element M selected from Fe, Ni and Co, and an element Rdifferent from the metal element M; and the element Rcombines with the element Lmore easily in terms of energy than the metal element M. Accordingly, a novel magnetoresistive device having a low junction resistance and a high MR can be obtained.