The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Dec. 20, 2000
Glen Fox, Colorado Springs, CO (US);
Fan Chu, Colorado Springs, CO (US);
Brian Eastep, Colorado Springs, CO (US);
Tomohiro Takamatsu, Iwate, JP;
Yoshimasa Horii, Iwate, JP;
Ko Nakamura, Kanagawa, JP;
Glen Fox, Colorado Springs, CO (US);
Fan Chu, Colorado Springs, CO (US);
Brian Eastep, Colorado Springs, CO (US);
Tomohiro Takamatsu, Iwate, JP;
Yoshimasa Horii, Iwate, JP;
Ko Nakamura, Kanagawa, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric dielectric material. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Deposition of the electrically conductive top electrode layer is followed by annealing the layer of ferroelectric dielectric material and the top electrode layer with a second anneal. The first and the second anneal are performed by rapid thermal annealing.