The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Jun. 30, 2003
Seon Yong Cha, Cheongju-si, KR;
Seon Yong Cha, Cheongju-si, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
The present invention generally relates to a NAND-type magnetoresistive RAM, and more specifically, to a NAND-type magnetoresistive RAM comprising a plurality of transistors connected in series as a NAND-type which can reduce the effective area per cell. Two or more NAND-type transistors sharing an adjacent source region and an adjacent drain region are connected in series, thereby reducing inactive regions. A read node connected to a bitline is shared by a plurality of transistors, thereby improving a read operation. As a result, the effective area per cell can be decreased, and the integration of a device can be improved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile