The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Oct. 28, 2003
Gautam Parthasarathy, Princeton, NJ (US);
Chihaya Adachi, East Windsor, NJ (US);
Paul E. Burrows, Princeton Junction, NJ (US);
Stephen R. Forrest, Princeton, NJ (US);
Gautam Parthasarathy, Princeton, NJ (US);
Chihaya Adachi, East Windsor, NJ (US);
Paul E. Burrows, Princeton Junction, NJ (US);
Stephen R. Forrest, Princeton, NJ (US);
The Trustees of Princeton University, Princeton, NJ (US);
Abstract
A highly transparent non-metallic cathode is disclosed that comprises a metal-doped organic electron injection layer that is in direct contact with a transparent non-metallic electron injecting cathode layer, such as indium tin oxide (ITO), wherein the metal-doped organic electron injection layer also functions as an exciton blocking or hole blocking layer. The metal-doped organic electron injection layer is created by diffusing an ultra-thin layer of about 5-10 Å of a highly electropositive metal such as Li throughout the layer. A representative embodiment of the highly transparent non-metallic cathode comprises a layer of ITO, a layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), which acts as an electron injection, exciton blocking, and hole blocking layer, and an ultra-thin layer of lithium, which degenerately dopes the layer of BCP, improving the electron injecting properties of the BCP layer. This cathode is demonstrated for use in an OLED having a transparency of about 90% or higher combined with a device external quantum efficiency of about 1% or higher.