The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Jan. 27, 2003
Hidenori Kawanishi, Nara, JP;
Kei Yamamoto, Nara, JP;
Fumihiro Konushi, Nara, JP;
Yoshie Fujishiro, Tenri, JP;
Toshihiko Yoshida, Nara, JP;
Hidenori Kawanishi, Nara, JP;
Kei Yamamoto, Nara, JP;
Fumihiro Konushi, Nara, JP;
Yoshie Fujishiro, Tenri, JP;
Toshihiko Yoshida, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor laser device has an n-type AlGaAs first cladding layera multiple quantum well active layerand a p-type AlGaAs second cladding layerformed in this order and supported by an n-type GaAs substrateThe multiple quantum well active layerhas two quantum well layersand barrier layersprovided on both sides of each quantum well layerThe quantum well layersare each made of InGaAsP, while the barrier layersare each made of InGaAsP. Here, vand vsatisfy v<vwhile wand wsatisfy w<wThe barrier layers have a tensile strain with respect to the GaAs substrate, while the well layers have a compressive strain with respect to the GaAs substrate.