The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Dec. 13, 2002
Kazuhisa Sakamoto, Kyoto, JP;
Kazuhisa Sakamoto, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
The present invention provides a semiconductor device having a bipolar transistor constructed so as to allow the adjustment of the base input signal voltage that switches on a transistor in which a diffusion region of a different conductivity type from that of the base region is formed at the contact of the base electrode, and to allow the base current to be controlled when a digital transistor is produced. A base electrode connection regionof an n-type is provided to a p-type base region, and a zener voltage control diffusion regionof a p-type is provided around the periphery of the base electrode connection regionso as to form a pn junction and undergo zener breakdown at the desired voltage. A resistorcomposed of polysilicon is connected to the base electrode connection regionvia a metal electrode. As a result, this semiconductor device has a bipolar transistor in which a zener diode ZD and the resistorare serially built into the base.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile