The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Dec. 02, 2002
Yoshiki Kuhara, Osaka, JP;
Naoyuki Yamabayashi, Osaka, JP;
Yasuhiro Iguchi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A photodiode (A) comprises a substrate, a light receiving layer having a band gap wavelength and including a pn-junction and at least an absorption layer having a band gap wavelength λg. One of the absorption layers is sandwiched between the substrate and the light receiving layer, the band gap wavelength λg of the absorption layer is shorter than the receiving signal wavelength λbut longer than noise wavelength λ(λ<λ<λ). Otherwise a photodiode (B) has two absorption layers epitaxially made on the substrate. One absorption layer is formed on the top surface of the substrate. The other absorption layer is formed on the bottom surface of the substrate. The absorption layers annihilate the noise λ. The PD has no sensitivity to λ.