The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2005

Filed:

Dec. 09, 2003
Applicant:

Noriyuki Miura, Kanagawa, JP;

Inventor:

Noriyuki Miura, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L027/01 ;
U.S. Cl.
CPC ...
Abstract

A buried insulating film is formed in an LDD region between a source region and a drain region, and a non-doped silicon film is formed in the SOI layer above the buried insulating film. The SOI layer lying under the buried insulating film has a body concentration of 10cm.


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