The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Dec. 09, 2003
Applicant:
Noriyuki Miura, Kanagawa, JP;
Inventor:
Noriyuki Miura, Kanagawa, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L027/01 ;
U.S. Cl.
CPC ...
Abstract
A buried insulating film is formed in an LDD region between a source region and a drain region, and a non-doped silicon film is formed in the SOI layer above the buried insulating film. The SOI layer lying under the buried insulating film has a body concentration of 10cm.
Miura, Noriyuki. (2005). Soi type mosfet (U.S. Patent No. 6885066). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6885066
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile