The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
May. 24, 2002
Applicants:
Tatsuya Shimoda, Suwa-gun, JP;
Takao Nishikawa, Shiojiri, JP;
Inventors:
Tatsuya Shimoda, Suwa-gun, JP;
Takao Nishikawa, Shiojiri, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ; H01L031/113 ; H01L031/119 ;
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a ferroelectric memory device includes a step of forming a first region () having surface characteristics allowing the material for the members of a ferroelectric capacitor section to be preferentially deposited, and a second region () having surface characteristics allowing the material for the capacitor section to be less deposited than the first region (), and a step of providing the material on the base () to form a first electrode (), a ferroelectric film (), and a second electrode () in the first region () of the base ().