The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Jan. 13, 2004
Torkel Arnborg, Stockholm, SE;
Ted Johansson, Djursholm, SE;
Torkel Arnborg, Stockholm, SE;
Ted Johansson, Djursholm, SE;
Infineon Technologies AG, Munich, DE;
Abstract
At the surface of a substrate a gate oxide layer is produced and is given a dual thickness. A first oxide layer is produced over the surface of a substrate by thermal oxidation and is covered by a mask layer defining suitably located openings. A material accelerating or retarding the oxidation of the substrate is ion implanted through the first oxide layer in the openings, after which the mask is removed and the thermal oxidation is continued over the now exposed total surface of the first oxide layer. The material used for ion implanting can be an oxidation rate promoting material such as chloride and bromine. The manufacturing method is simple and adds little to presently used process flows for fabricating MOS devices. The dual thickness of the gate oxide gives the manufactured MOS device a low level of total noise generated when using the device for instance in RF-circuits.