The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2005
Filed:
Oct. 06, 2000
Tetsuya Ogawa, Hyogo, JP;
Hidetada Tokioka, Hyogo, JP;
Junichi Nishimae, Hyogo, JP;
Tatsuki Okamoto, Hyogo, JP;
Yukio Sato, Hyogo, JP;
Mitsuo Inoue, Hyogo, JP;
Mitsutoshi Miyasaka, Nagano, JP;
Hiroaki Jiroku, Nagano, JP;
Tetsuya Ogawa, Hyogo, JP;
Hidetada Tokioka, Hyogo, JP;
Junichi Nishimae, Hyogo, JP;
Tatsuki Okamoto, Hyogo, JP;
Yukio Sato, Hyogo, JP;
Mitsuo Inoue, Hyogo, JP;
Mitsutoshi Miyasaka, Nagano, JP;
Hiroaki Jiroku, Nagano, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.