The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2005

Filed:

Feb. 13, 2003
Applicants:

Akihiko Tsuzumitani, Osaka, JP;

Hisashi Ogawa, Osaka, JP;

Yasutoshi Okuno, Kyoto, JP;

Yoshihiro Mori, Osaka, JP;

Inventors:

Akihiko Tsuzumitani, Osaka, JP;

Hisashi Ogawa, Osaka, JP;

Yasutoshi Okuno, Kyoto, JP;

Yoshihiro Mori, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8242 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor device has a capacitance insulating film having a perovskite structure represented by the general formula ABO(where each of A and B is a metal element) and first and second electrodes opposed to each other with the capacitance insulating film interposed therebetween. The capacitance insulating film is formed such that the composition of the metal element A or B is higher in the region thereof adjacent the first electrode than in the other region thereof.


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