The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Apr. 03, 2003
Manuela Buda, Canberra, AU;
Hark Hoe Tan, Grarran, AU;
Michael Francis Aggett, Melba, AU;
Chennupati Jagadish, Evatt, AU;
Manuela Buda, Canberra, AU;
Hark Hoe Tan, Grarran, AU;
Michael Francis Aggett, Melba, AU;
Chennupati Jagadish, Evatt, AU;
The Australian National University, Australian Capital Territory, AU;
Abstract
A diode laser formed by a plurality of layers including n-type layers and p-type layers, the plurality of layers having a substantially asymmetric refractive index profile with respect to the layer growth direction so as to generate an optical field distribution with a larger fraction in n-type layers than in p-type layers, and configured to generate a beam with a divergence of less than about 28° in the growth direction. The layers include an active layer for generating the optical field, a trap layer for attracting the optical field, and a separation layer between the active layer and the trap layer for repelling the optical field. The laser can be configured to have an internal loss of about 1.2 cmor less, and to generate a laser beam with a spot size of at least about 1.1 μm and a divergence of approximately 13° in the growth direction. If the length of the laser is at least about 1 mm, the threshold current density of the laser can be less than about 400 A cm.