The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Sep. 13, 2002
J. Marcos Laraia, Pocatello, ID (US);
J. Marcos Laraia, Pocatello, ID (US);
AMI Semiconductor, Inc., Pocatello, ID (US);
Abstract
An integrated overvoltage and reverse voltage protection circuit. The protection circuit includes a field-effect transistor having a source terminal coupled to an input terminal of the protection circuit, and a drain terminal coupled to an output terminal of the protection circuit. A resistor is coupled between the source terminal and the body terminal of the field-effect transistor to inhibit reverse current flow during a reverse voltage condition. A voltage-current dependent circuit is coupled between the gate terminal and the source terminal of the field-effect transistor, and is configured to apply a voltage between the gate terminal and the source terminal that is dependent on the current passing through the voltage-current dependent circuit. A current application circuit is coupled to the voltage-current dependent circuit and is configured to apply a current that limits or even altogether stops an applied overvoltage condition from reaching a load circuit.