The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2005

Filed:

Feb. 29, 2000
Applicants:

Richard B. Merrill, Woodside, CA (US);

Richard M. Turner, Menlo Park, CA (US);

Milton B. Dong, Saratoga, CA (US);

Richard F. Lyon, Los Altos, CA (US);

Inventors:

Richard B. Merrill, Woodside, CA (US);

Richard M. Turner, Menlo Park, CA (US);

Milton B. Dong, Saratoga, CA (US);

Richard F. Lyon, Los Altos, CA (US);

Assignee:

Foveon, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N005/335 ; H01L027/00 ;
U.S. Cl.
CPC ...
Abstract

A storage pixel sensor disposed on a semiconductor substrate comprises a photodiode having a first terminal coupled to a first potential and a second terminal. A barrier transistor has a first terminal coupled to the second terminal of the photodiode, a second terminal and a control gate coupled to a barrier set voltage. A reset transistor has a first terminal coupled to the second terminal of the barrier transistor, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to a source of a RESET signal. A photocharge integration node is coupled to said second terminal of said barrier transistor. The photocharge integration node comprises the control gate of a first source-follower transistor. The first source-follower transistor is coupled to a source of bias current and has an output. A capacitive storage node is coupled to the output of the first source-follower transistor and comprises the control gate of a second source-follower transistor having an output. An exposure transistor is coupled between the output of the first source-follower transistor and a global current-summing node and has a control gate coupled to a saturation level voltage.


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