The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Aug. 20, 2002
Young-chul Choi, Suwon, KR;
Ji-hoon Ahn, Seoul, KR;
Hyek-bok Rhee, Seoul, KR;
Dong-hee Han, Suwon, KR;
Young-Chul Choi, Suwon, KR;
Ji-Hoon Ahn, Seoul, KR;
Hyek-Bok Rhee, Seoul, KR;
Dong-Hee Han, Suwon, KR;
Samsung SDI Co., Ltd., Suwon-si, KR;
Abstract
The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate. The method includes depositing a catalyst metal layer, an insulation layer, and a gate metal layer on a substrate; forming a cavity section by removing a portion of the gate metal layer, the insulation layer, and the catalyst metal layer using a photolithography process; and forming an emitter by mounting the substrate on a chemical vapor deposition reactor and growing carbon nanotubes in a low temperature atmosphere of 500˜800 degrees Celsius (° C.).