The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Sep. 17, 2003
Satoshi Takenaka, Ryuo-cyo, JP;
Satoshi Takenaka, Ryuo-cyo, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A semiconductor device is provided including a transistor having excellent ON current characteristics and OFF leakage current characteristics, an electro-optical device holding an electro-optical material using the semiconductor device, an electronic apparatus using the electro-optical device, and a method for manufacturing the semiconductor device. For a transistor, a source region and a drain region are impurity regions heavily doped by a self-aligned method relative to a gate electrode. Parts of the gate insulating film overlapping with boundary regions of the channel formation region adjacent to the drain region and the source region, are thicker than a part of the gate insulating film overlapping with a center part of the channel formation region, relative to the longitudinal direction of the channel.