The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Jul. 26, 2002
Jagdish Narayan, Raleigh, NC (US);
Jinlin YE, South Easton, MA (US);
Schang-jing Hon, Attleboro, MA (US);
Ken Fox, Clinton, MA (US);
Jyh Chia Chen, Ellicott City, MD (US);
Hong K. Choi, Sharon, MA (US);
John C. C. Fan, Brookline, MA (US);
Jagdish Narayan, Raleigh, NC (US);
Jinlin Ye, South Easton, MA (US);
Schang-Jing Hon, Attleboro, MA (US);
Ken Fox, Clinton, MA (US);
Jyh Chia Chen, Ellicott City, MD (US);
Hong K. Choi, Sharon, MA (US);
John C. C. Fan, Brookline, MA (US);
Kopin Corporation, Taunton, MA (US);
Abstract
An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.