The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Aug. 09, 2000
Applicants:
Ting Yiu Tsui, Dallas, TX (US);
Stephen Keetai Park, Austin, TX (US);
Christian Zistl, Dresden, DE;
Inventors:
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract
A method is provided, the method comprising forming a dielectric layer above a structure layer, forming a hard mask layer above the dielectric layer, and forming at least one trench opening and at least one upper portion of a first via opening in the dielectric layer through the hard mask layer. The method also comprises forming a low viscosity photoresist layer above the at least one trench opening and the at least one upper portion of the first via opening in the dielectric layer.