The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Apr. 16, 2001
Shigeo Onishi, Nara, JP;
Shigeo Onishi, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In a semiconductor device producing method, a plug is formed within a contact hole formed in a barrier film and an interlayer insulating film on a semiconductor substrate. Then, an insulation film is formed on the plug and barrier film, and a hole is made in the insulation film such that an upper surface of the plug is exposed. A first conductive film is formed on the insulation film so as to fill the hole, and then etched by a CMP method to form a lower electrode within the hole. The insulation film is removed and the lower electrode is left in a protuberant manner. A dielectric film made of a ferroelectric or high-dielectric-constant substance and a second conductive film are sequentially formed over the lower electrode and the barrier film, and then patterned simultaneously to thereby form a capacitor dielectric film and an upper electrode.