The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Dec. 09, 2003
Ronald Jay Bolam, East Fairfield, VT (US);
William Paul Hovis, Rochester, MN (US);
Terrance Wayne Kueper, Rochester, MN (US);
Ronald Jay Bolam, East Fairfield, VT (US);
William Paul Hovis, Rochester, MN (US);
Terrance Wayne Kueper, Rochester, MN (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and testing circuit are provided for tracking transistor stress degradation. A first array of P-channel field effect transistors (PFETs) is connected in parallel. The first array of PFETs is stressed by applying a low gate input and a high source and a high drain to the PFETs during a stress period. The first array of PFETs is tested by operating the PFETs in a saturated region during a test period. A reference array of PFETs is not stressed during the stress period. The reference array of PFETs is activated for testing to compare a saturated drain current performance with the first array of PFETs during the test period.