The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Jan. 13, 2003
Applicants:
Nobumasa Ueda, Nagoya, JP;
Shoji Mizuno, Okazaki, JP;
Inventors:
Nobumasa Ueda, Nagoya, JP;
Shoji Mizuno, Okazaki, JP;
Assignee:
Denso Corporation, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L023/02 ; H01L023/06 ;
U.S. Cl.
CPC ...
Abstract
When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.