The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Mar. 26, 2004
Applicants:
Yong-sun Sohn, Ichon-shi, KR;
Chang-woo Ryoo, Ichon-shi, KR;
Jeong-youb Lee, Ichon-shi, KR;
Inventors:
Assignee:
Hynix Semiconductor Inc., Ichon-shi, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract
A method for fabricating a CMOS transistor is disclosed. The present invention provides a method for producing a CMOS transistor having enhanced performance since a short channel characteristic and operation power can be controlled by the duplicate punch stop layer of the pMOS region and the operation power of the nMOS is also controlled by dopant concentration of the duplicated LDD region combined by the first LDD region and the second LDD region.