The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
May. 29, 2003
Applicant:
Hubert Rothleitner, Villach, AT;
Inventor:
Hubert Rothleitner, Villach, AT;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ;
U.S. Cl.
CPC ...
Abstract
An integrated MOS power transistors, in particular a lateral PMOS power transistor and a lateral n-DMOS power transistor, in which the bulk node is disposed in a manner spatially isolated from the source electrode zone. The particular integration structure of the MOS power transistor avoids a parasitic drain-bulk diode, a parasitic body diode and a substrate diode and thereby achieves an area-saving protection against over-currents in the event of reverse voltage polarity between drain and source.