The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Aug. 22, 2003
Naresh Thapar, Redundo Beach, CA (US);
Naresh Thapar, Redundo Beach, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A MOSgated device has spaced vertical trenches lined with a gate oxide and filled with a P type polysilicon gate. The gate oxide extends along a vertical Nchannel region disposed between an Nsource region and an Ndrift region. A Schottky barrier of aluminum is disposed adjacent the accumulation region extending along the trench to collect holes which are otherwise injected into the source region during voltage blocking. A common source or drain contact is connected to the Nregion and to the Schottky contact. A two gate embodiment is disclosed in which separately energized gates are connected to alternatively located gate polysilicon volumes.