The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Jul. 03, 2001
Robert Aigner, Unterhaching, DE;
Lueder Elbrecht, Munich, DE;
Thomas Rainer Herzog, Hoehenkirchen-Siegertsbrunn, DE;
Stephan Marksteiner, Putzbrunn, DE;
Winfried Nessler, Munich, DE;
Robert Aigner, Unterhaching, DE;
Lueder Elbrecht, Munich, DE;
Thomas Rainer Herzog, Hoehenkirchen-Siegertsbrunn, DE;
Stephan Marksteiner, Putzbrunn, DE;
Winfried Nessler, Munich, DE;
Infineon Technologies AG, Münich, DE;
Abstract
A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode, an upper electrode and a layer which is arranged between them and is piezoelectrical or pyroelectrical. An auxiliary layer is arranged between the lower electrode and the layer and is used for homogeneously oriented growth of the layer during the production process. The auxiliary layer preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.