The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Mar. 16, 2001
Stefan Bader, Eilsbrunn, DE;
Berthold Hahn, Hemau, DE;
Volker Härle, Laaber, DE;
Hans-jürgen Lugauer, Sinzing, DE;
Manfred Mundbrod-vangerow, Oxenbronn, DE;
Dominik Eisert, Regensburg, DE;
Stefan Bader, Eilsbrunn, DE;
Berthold Hahn, Hemau, DE;
Volker Härle, Laaber, DE;
Hans-Jürgen Lugauer, Sinzing, DE;
Manfred Mundbrod-Vangerow, Oxenbronn, DE;
Dominik Eisert, Regensburg, DE;
Osram GmbH, , DE;
Abstract
This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (). The semiconductor body has a first principal surface () and a second principal surface (), with the radiation produced being emitted through the first principal surface () and with a reflector () being produced on the second principal surface (). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer () is first applied to a substrate (), and a plurality of GaN layers () that constitute the semiconductor body of the component are then applied to this. The substrate () and the interlayer () are then detached and a reflector () is produced on a principal surface of the semiconductor body.