The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
May. 20, 1999
Toshiro Hayakawa, Kanagawa-ken, JP;
Toshiaki Fukunaga, Kanagawa-ken, JP;
Mitsugu Wada, Kanagawa-ken, JP;
Toshiro Hayakawa, Kanagawa-ken, JP;
Toshiaki Fukunaga, Kanagawa-ken, JP;
Mitsugu Wada, Kanagawa-ken, JP;
Fuji Photo Film Co., Ltd., Kanagawa-ken, JP;
Abstract
A semiconductor laser has an active region which includes at least a quantum well layer and upper and lower optical waveguide layers and is of InGaAsP(0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers are formed on opposite sides of the active region. At least one of the optical waveguide layers is not smaller than 0.25 μm in thickness, and a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer.