The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6876079 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 05, 2005

Filed:

Feb. 25, 2002
Applicant:

Junichi Aoyama, Kanagawa, JP;

Inventor:

Junichi Aoyama, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L023/48 ; H01L023/52 ; H01L029/40 ;
U.S. Cl.
CPC ...
Abstract

The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.


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Aoyama, Junichi. (2005). Semiconductor device and method of manufacturing the same (U.S. Patent No. 6876079). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6876079

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