The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Mar. 09, 2004
Andy C. Wei, Radebeul/Dresden, DE;
Derick J. Wristers, Bee Caves, TX (US);
Mark B. Fuselier, Austin, TX (US);
Andy C. Wei, Radebeul/Dresden, DE;
Derick J. Wristers, Bee Caves, TX (US);
Mark B. Fuselier, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
The present invention is generally directed to a fully-depleted SOI device structure. In one illustrative embodiment, the device comprises first, second and third doped regions formed in the bulk substrate, wherein the dopant concentration level in the doped regions is greater than the dopant concentration in the bulk substrate. The first doped region is substantially aligned with the gate electrode of the device, while the second and third doped regions are vertically spaced apart from the first doped region.