The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Sep. 12, 2003
Applicant:
Takayuki Hisaka, Tokyo, JP;
Inventor:
Takayuki Hisaka, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L031/072 ; H01L031/109 ; H01L031/0328 ; H01L031/0336 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor substrate, a channel layer, a Schottky layer, a first layer having a narrow band gap than the Schottky layer, a second layer having band discontinuity with the Schottky layer, a gate electrode, an n+ layer, a source electrode, and a drain electrode. The first and second layers are within the Schottky layer, and the second layer is disposed on the first layer.
Hisaka, Takayuki. (2005). Semiconductor device (U.S. Patent No. 6876011). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6876011
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile