The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Jul. 03, 2001
Mitsuhiro Matsumoto, Kashihara, JP;
Fumihiro Konushi, Nara, JP;
Shinichi Kawato, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor laser element includes, on a substrate, at least a first conductive type first clad layer, an active layer, a second conductive type second clad layer, a current block layer having a stripe-shaped deficient portion extending in a direction of a resonator, a second conductive type third clad layer buried in the stripe-shaped deficient portion of the current block layer and a second conductive type protection layer provided on the third clad layer. The active layer includes at least a window region adjacent to its one end surface and an internal region having a quantum well structure, and a portion opposite to the internal region is irradiated with an ionized atom from a surface of a layer arranged on the second conductive type second clad layer side and thereafter subjected to heat treatment to form the window region. A peak wavelength λw of photoluminescence from the window region of the active layer has a relation of:λnmwith respect to a peak wavelength λi of photoluminescence from the internal region of the active layer, and a half-width of the photoluminescence from the window region is narrower than a half-width of the photoluminescence from the internal region.