The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2005

Filed:

Nov. 19, 2003
Applicants:

Jae-bon Koo, Yongin, KR;

Ji-yong Park, Suwon, KR;

Ul-ho Lee, Yongin, KR;

Jin-soo Kim, Yongin, KR;

Jin-woung Jung, Suwon, KR;

Chang-gyu Lee, Seoul, KR;

Inventors:

Jae-Bon Koo, Yongin, KR;

Ji-Yong Park, Suwon, KR;

Ul-Ho Lee, Yongin, KR;

Jin-Soo Kim, Yongin, KR;

Jin-Woung Jung, Suwon, KR;

Chang-Gyu Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/04 ;
U.S. Cl.
CPC ...
Abstract

A flat panel display capable of lowering an on-current of a driving thin film transistor (TFT), maintaining high switching properties of a switching TFT, maintaining uniform brightness using the driving TFT, and maintaining a life span of a light emitting device while the same voltages are applied to the switching TFT and the driving TFT without changing a size of an active layer. The flat panel display includes a light emitting device, a switching thin film transistor including a semiconductor active layer having a channel area for transferring a data signal to the light emitting device, and a driving thin film transistor including a semiconductor active layer having a channel area for driving the light emitting device. A predetermined amount of current flows through the light emitting device according to the data signal. The channel area of the switching thin film transistor has crystal grains with at least one of different sized or different shaped crystal grains than the crystal grains in the channel area of the driving thin film transistor.


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