The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Mar. 28, 2001
Applicants:
Sivananda K. Kanakasabapathy, Richardson, TX (US);
Lawrence J. Overzet, Plano, TX (US);
Inventors:
Sivananda K. Kanakasabapathy, Richardson, TX (US);
Lawrence J. Overzet, Plano, TX (US);
Assignee:
Board of Regents, The University of Texas System, Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A system for plasma processing using electron-free ion-ion plasmas, wherein the substrate bias waveform is synched to a pulsed RF drive. A delay is included between the end of an RF drive pulse and the start of a bias pulse, to allow the electron population to drop to approximately zero. By using a source gas mixture which has highly electronegative components, substrate bombardment with negative ions can be achieved.