The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Jul. 03, 2003
Akira Hokazono, Sagamihira, JP;
Yoshiaki Toyoshima, Kashiwa, JP;
Akira Hokazono, Sagamihira, JP;
Yoshiaki Toyoshima, Kashiwa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An aspect of the present invention includes a first MOSFET having a first gate electrode formed on a first semiconductor layer in a first region of a semiconductor substrate, a first channel region formed immediately below the first gate electrode in the first semiconductor layer, a first diffusion layer constituting source/drain regions formed at both the sides of the first channel region in the first semiconductor layer, a first epitaxial layer formed on the first diffusion layer, and a first silicide layer formed on the first epitaxial layer, and a second MOSFET having a second gate electrode formed on a second semiconductor layer in a second region of the semiconductor substrate, a second channel region formed immediately below the second gate electrode in the second semiconductor layer, a second diffusion layer constituting source/drain regions formed at both the sides of the second channel region in the second semiconductor layer, and a second silicide layer formed on the second diffusion layer.