The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Aug. 11, 2003
Igor Kasko, Fishkill, NY (US);
Matthias Kroenke, Dresden, DE;
Thomas Mikolajick, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The invention relates to a method for producing ferroelectric capacitors that are structured using the stack principle and that are used in integrated semiconductor memory chips. The individual capacitor modules have an oxygen barrier between a lower capacitor electrode and an electrically conductive plug. At a site where it is not covered by the corresponding oxygen barrier, an unstructured adhesive layer is oxidized by the oxygen arising during the tempering process of the ferroelectric and forms insulating segments at the site in such a way that the lower capacitor electrodes of the ferroelectric capacitors are electrically insulated from one another. This makes it possible to dispense with structuring the adhesive layer. Furthermore, the layer serves as a getter of oxygen and inhibits the diffusion of oxygen to the plug.