The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Mar. 03, 2003
James R. Wasson, Tempe, AZ (US);
Pawitter Mangat, Gilbert, AZ (US);
James R. Wasson, Tempe, AZ (US);
Pawitter Mangat, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An attenuated phase shift mask (or) includes a substrate (or) and an attenuation stack (or) overlying the substrate. The attenuation stack includes a chromium layer or ruthenium layer (or) overlying the substrate, a tantalum silicon oxide layer (or) overlying the chromium layer or the ruthenium layer, and a tantalum silicon nitride layer (or) overlying the tantalum silicon oxide layer. The attenuation stack may also include a layer () between the substrate () and the chromium or ruthenium layer (). In one embodiment, this layer is a portion of the substrate. The attenuation stack is used to pattern photoresist () on a semiconductor wafer. In one embodiment, portions of the substrate adjacent the attenuation stack has a transmission of greater than 90 percent and the attenuation stack has a transmission of 5 to 20 percent at the exposure wavelength. In one embodiment, an inspection contrast between the substrate and the attenuation stack at an inspection wavelength is greater than 75 percent.