The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6874511 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 05, 2005

Filed:

Jul. 24, 2002
Applicants:

Bernd Kutsch, Stuttgart, DE;

Franz Laermer, Weil der Stadt, DE;

Inventors:

Bernd Kutsch, Stuttgart, DE;

Franz Laermer, Weil der Stadt, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract

Method of avoiding or eliminating deposits in the exhaust area of a vacuum system in which a gas containing depositable constituents in the exhaust area is at least intermittently pumped out of a vacuum chamber that is connected to a vacuum pump via a gas line. A reactive gas that removes deposits from the gas in the vacuum pump and/or units provided downstream therefrom, and/or reduces or eliminates existing deposits in this area is at least intermittently added to the gas directly upstream from or within the vacuum pump. The proposed method is particularly suitable for anisotropic plasma etching of silicon using alternating etching steps and polymerization steps, the vacuum chamber being supplied with a sulfur-containing etching gas during the etching steps and a polymerizing agent-containing gas during the polymerization steps.


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