The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2005

Filed:

May. 15, 2001
Applicants:

Tetsuro Asano, Oizumi-machi, JP;

Takayoshi Higashino, Neyagawa, JP;

Koichi Hirata, Ashikaga, JP;

Inventors:

Tetsuro Asano, Oizumi-machi, JP;

Takayoshi Higashino, Neyagawa, JP;

Koichi Hirata, Ashikaga, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04B001/44 ;
U.S. Cl.
CPC ...
Abstract

A compound semiconductor switching device is based on a designing guideline that isolation should be assured by reducing the gate width of switching FET, thereby reducing the capacitance of the FET. Proper isolation between the two signal passes IS obtained with a FET gate width of about 700 μm or smaller at a signal frequency of about 2.4 GHz or higher, without employing a shunt FET.


Find Patent Forward Citations

Asano, Tetsuro. (2005). Compound semiconductor switching device for high frequency switching (U.S. Patent No. 6873828). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6873828

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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