The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Jan. 26, 2001
Bernd Maisenholder, Zürich, CH;
Johannes Edlinger, Frastanz, AT;
Claus Heine, Chur, CH;
Michael Pawlak, Laufenburg, DE;
Gert Duveneck, Bad Krozingen, DE;
Bernd Maisenholder, Zürich, CH;
Johannes Edlinger, Frastanz, AT;
Claus Heine, Chur, CH;
Michael Pawlak, Laufenburg, DE;
Gert Duveneck, Bad Krozingen, DE;
Unaxis Balzers Aktiengesellschaft, Balzers, LI;
Abstract
A coupling grating formed as a line grating with a grating period between 100 nm and 2500 nm, a substrate () is covered with a photoresist layer () and exposed for instance at the Lithrow angle (Θ) or at 0° to a mercury-vapour lamp () via a folding mirror (') through a phase mask () in the near field of which the photoresist layer is arranged, then structured by reactive ion etching and provided with a transparent layer by reactive DC magnetron sputtering, particularly pulsed DC sputtering or AC-superimposed DC sputtering. The phase mask () is structured in advance with the laser two-beam interference method. The process is particularly suited for the production of optical elements, particularly evane-scent field sensor plates and optical couplers for communications technology which can be employed in particular as filters for wavelength multiplexing in fibre-optic networks.