The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Mar. 20, 2003
Atsushi Nakamura, Komoro, JP;
Kiyomi Ikemoto, Tateshina, JP;
Shoichi Takahashi, Saku, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor laser performs high-speed modulation with a low-capacitance structure. The laser comprises a multilayered growth layer which is electrically isolated from a substrate and includes an active layer between a lower semiconductor layer of first conductivity type and an upper semiconductor layer of second conductivity type. A ridge is formed on the surface of the multilayer without reaching the active layer, and an insulating film is formed on the substrate main surface except for the ridge upper surface. An electrode contacts the second conductivity type semiconductor layer on the ridge upper surface and extends onto the insulating film beyond a second isolation trench, and an electrode which deviates from above the ridge is formed on the insulating film on a first isolation trench side and contacts the first conductivity type semiconductor layer located below the active layer.