The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2005
Filed:
Apr. 19, 2002
Applicant:
Katsuo Komatsuzaki, Ibaraki, JP;
Inventor:
Katsuo Komatsuzaki, Ibaraki, JP;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C011/22 ;
U.S. Cl.
CPC ...
Abstract
A ferro-electric memory device system and method is described for accessing and sensing memory cells of an FeRAM memory array with an open bit line architecture. The memory device permits the sharing of certain memory circuits such as, a data buffer, and a sense amplifier between several segments of an array of FeRAM memory cells associated with a plurality of plate lines and/or word lines of the array. Various combinations of segmented bit lines, segmented plate lines and/or segmented word lines facilitate sharing the memory circuits of the device between the array segments or multiple arrays of memory cells.